A Comparative analysis of steep retrograde and uniform doping for high-k dielectrics based multi-gate devices

Rajiv Ranjan Thakur a) *, Pragati Singh a)

Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Mizoram, Aizawl 796001, India.

Carbon - Science and Technology 10/4 (2018) 87 - 94.

© Applied Science Innovations Private Limited, India.

Full Text (OPEN ACCESS): CST-327.pdf

 

Keywords: High-k dielectrics, retrograde doping, uniform doping, threshold voltage, oxide capacitance

Abstract: A brief comparison has been done for the uniform doped and steep retrograde doped MultiGate Devices with High-k Dielectric Oxide Layer in comparison with the traditional Silicon Dioxide Oxide Layer. Analytical modeling has been done for the steep retrograde doping and it has been found that the effects of Threshold Voltage (Vth) Roll-Off have been suppressed up-to certain extent using Steep Retrograde Doping. The study also predicts that Hafnium Dioxide can be very good alternatives to the traditional gate oxide as it greatly suppresses high leakages and other problems. The device was carried out using Sentaurus 3D-TCAD Tools