Is vacuum annealing converts p-type single wall carbon nanotube field effect transistor (in air) to n-type (in vacuum) is universially true (?)

Prakash R. Somani; A. Kobayashi; Y. Ohno; S. Kishimoto; T. Mizutani

Is vacuum annealing converts p-type single wall carbon nanotube field effect transistor (in air) to n-type (in vacuum) is universially true (?)

Prakash R. Somani (*), A. Kobayashi, Y. Ohno, S. Kishimoto, T. Mizutani

Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-Ku, Nagoya, 464-8603, Japan.

LETTER, Carbon – Science and Technology 2/2 (2009) 98 – 102.

Full Text (OPEN ACCESS) : CST-23.pdf

Keywords: Molecular electronics, single walled carbon nanotube, Field effect transistor, FET, Schottky Junction FET, e-beam lithography, CVD, n-type FET

Abstract: Our study on nickel silicide and gold contacted single-wall-carbon-nanotube field effect transistors (SWCN-FETs) is in sharp contrast to earlier published reports of type conversion in SWCN-FETs (from p- to n-) when cycled between air and vacuum, and indicates that (1) band gap of SWCN (2) the extent to which Fermi level of the metal contact gets shifted due to adsorption/desorption of oxygen and (3) relative position of the Fermi level of the metal contact with respect to the top of the valance band of SWCN (in an oxygen-free environment) are some of the important factors that governs such phenomena.

Applied Science Innovations Pvt. Ltd.

Is vacuum annealing converts p-type single wall carbon nanotube field effect transistor (in air) to n-type (in vacuum) is universially true (?)